Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD
Identifieur interne : 004E57 ( Main/Repository ); précédent : 004E56; suivant : 004E58Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD
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Abstract
Indium tin oxide (ITO) and titanium dioxide (TiO2) single layer and double layer ITO/TiO2 films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO2 substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO2 films in the vis-NIR from about 70% to 92%. High transmission (≃90%) was observed for the double layer ITO/TiO2 with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (Eg), as well as the refractive indexes (n) for the films were estimated. n ≃ 2.03 and 2.04, respectively for ITO films and TiO2 film deposited at 400 °C in the visible region. Post-annealing of the TiO2 films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO2 films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO2 films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO2 films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO2 films deposited at 200 °C. The shift decreases by half when the TiO2 film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of ITO/TiO<sub>2</sub> single and double layer thin films deposited by RPLAD</title><author><name sortKey="Fotsa Ngaffo, Fernande" uniqKey="Fotsa Ngaffo F">Fernande Fotsa-Ngaffo</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>School of Physics, University of the Witwatersrand, Private bad Wits 2050</s1><s2>Johannesburg</s2><s3>ZAF</s3><sZ>1 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Johannesburg</wicri:noRegion><orgName type="university">Université du Witwatersrand</orgName><placeName><settlement type="city">Johannesburg</settlement><region type="region" nuts="2">Gauteng</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Faculty of science, University of Buéa, P.O. Box 63</s1><s2>Buéa</s2><s3>CMR</s3><sZ>1 aut.</sZ></inist:fA14><country>Cameroun</country><wicri:noRegion>Buéa</wicri:noRegion></affiliation></author><author><name sortKey="Paola Caricato, Anna" uniqKey="Paola Caricato A">Anna Paola Caricato</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Salerno</s1><s2>73100 Lecce</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>73100 Lecce</wicri:noRegion></affiliation></author><author><name sortKey="Romano, Francesco" uniqKey="Romano F">Francesco Romano</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Salerno</s1><s2>73100 Lecce</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>73100 Lecce</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0200804</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0200804 INIST</idno><idno type="RBID">Pascal:10-0200804</idno><idno type="wicri:Area/Main/Corpus">004651</idno><idno type="wicri:Area/Main/Repository">004E57</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Double layers</term><term>Energy gap</term><term>Inorganic compounds</term><term>Refractive index</term><term>Thin films</term><term>Titanium oxide</term><term>Transition element compounds</term><term>Transmittance</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche double</term><term>Couche mince</term><term>Recuit</term><term>Facteur transmission</term><term>Indice réfraction</term><term>Bande interdite</term><term>Oxyde de titane</term><term>O Ti</term><term>TiO2</term><term>Composé minéral</term><term>Composé de métal de transition</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) and titanium dioxide (TiO<sub>2</sub>) single layer and double layer ITO/TiO<sub>2</sub> films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO<sub>2</sub> substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO<sub>2</sub> films in the vis-NIR from about 70% to 92%. High transmission (≃90%) was observed for the double layer ITO/TiO<sub>2</sub> with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (Eg), as well as the refractive indexes (n) for the films were estimated. n ≃ 2.03 and 2.04, respectively for ITO films and TiO<sub>2</sub> film deposited at 400 °C in the visible region. Post-annealing of the TiO<sub>2</sub> films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO<sub>2</sub> films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO<sub>2</sub> films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO<sub>2</sub> films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO<sub>2</sub> films deposited at 200 °C. The shift decreases by half when the TiO<sub>2</sub> film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO<sub>2</sub>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>255</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of ITO/TiO<sub>2</sub> single and double layer thin films deposited by RPLAD</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the Sixth International Conference on Photo-Excited Processes and Applications (6-ICPEPA)</s1></fA09><fA11 i1="01" i2="1"><s1>FOTSA-NGAFFO (Fernande)</s1></fA11><fA11 i1="02" i2="1"><s1>PAOLA CARICATO (Anna)</s1></fA11><fA11 i1="03" i2="1"><s1>ROMANO (Francesco)</s1></fA11><fA12 i1="01" i2="1"><s1>SUGIOKA (Koji)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>PELED (Aaron)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>School of Physics, University of the Witwatersrand, Private bad Wits 2050</s1><s2>Johannesburg</s2><s3>ZAF</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Faculty of science, University of Buéa, P.O. Box 63</s1><s2>Buéa</s2><s3>CMR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, University of Salerno</s1><s2>73100 Lecce</s2><s3>ITA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>RIKEN - Advanced Science Institute</s1><s2>Saitama</s2><s3>JPN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Holon Academic Institute of Technology</s1><s2>Holon</s2><s3>ISR</s3><sZ>2 aut.</sZ></fA15><fA20><s1>9684-9687</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000170124030290</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0200804</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) and titanium dioxide (TiO<sub>2</sub>) single layer and double layer ITO/TiO<sub>2</sub> films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO<sub>2</sub> substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO<sub>2</sub> films in the vis-NIR from about 70% to 92%. High transmission (≃90%) was observed for the double layer ITO/TiO<sub>2</sub> with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (Eg), as well as the refractive indexes (n) for the films were estimated. n ≃ 2.03 and 2.04, respectively for ITO films and TiO<sub>2</sub> film deposited at 400 °C in the visible region. Post-annealing of the TiO<sub>2</sub> films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO<sub>2</sub> films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO<sub>2</sub> films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO<sub>2</sub> films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO<sub>2</sub> films deposited at 200 °C. The shift decreases by half when the TiO<sub>2</sub> film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO<sub>2</sub>.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche double</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Double layers</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Recuit</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Annealing</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Transmittance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Refractive index</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Bande interdite</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Energy gap</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>15</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>15</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>15</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>O Ti</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>TiO2</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé de métal de transition</s0><s5>63</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>63</s5></fC03><fN21><s1>130</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Photo-Excited Processes and Applications (ICPEPA)</s1><s2>6</s2><s3>Sapporo, Hokkaido JPN</s3><s4>2008-09-09</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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